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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB536 DESCRIPTION With TO-220C package Complement to type 2SD381 Low collector saturation voltage APPLICATIONS Audio frequency power amplifier Low speed power switching PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER ANG INCH Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector-base voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -130 -120 -5 -1.5 -3.0 -0.3 UNIT V V V A A A Ta=25ae PT Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 1.5 W 20 150 -50~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB536 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -120 V VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -2.0 V VBEsat Base-emitter saturation voltage IC=-1A; IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -1.0 |I A IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 |I A hFE-1 DC current gain IC=-5mA ; VCE=-5V 25 hFE-2 COB IN M DC current gain Output capacitance IC=-0.3A ; VCE=-5V fT Transition frequency hFE-2 Classifications N 40-80 ANG CH L 80-160 K EMIC ES IC=-0.1A ; VCE=-5V IE=0 ; VCB=-10V; f=1MHz OND TOR UC 40 250 35 40 pF MHz 60-120 120-250 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB536 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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